Molecular logic/memory materials and devices

Dr. Hyo-Young Lee

ETRI, Korea

2005. 8. 24

 
At present, molecular electronics (moletronics) is an explosively growing field of experimental and theoretical activity. The molecular rectifier (MR) is still one of the central objects of this research. Even the simplest future application, such as molecular memory, will require a high quality MR with sharp voltage thresholds, large current rectification ratios, small time constants, large breakdown voltages, and so on. MRs demonstrated so far [1-3] constitute an impressive proof of principle but their electrical parameters are in fact very poor. The situation prompts further investigation of molecular rectification [4].

However, there is still challenging issue for the realization of logic circuits with nano-scaled array devices in which organic molecules can be used to transfer and process an electronic signals. In order to design and realize such nano-scaled molecular array devices, several requirements should be satisfied such as rectifying molecules, device fabrication, immobilization of organic molecules, and implementation of logic device.

Here, we report the simple fabrication process for making a 3x3 molecular rectifying array device containing 9 nano via holes and I-V characterization of the rectifying molecule at room temperature.

Also, we demonstrate that this 3x3 array device containing newly synthesized electron Donor-sigma-Acceptor-thiolate molecule can be used as electronically configurable OR/AND logic gate.

In addition, we like to briefly introduce a development of molecular memory device such as designing organic memory materials and soft lithography for a device fabrication in ETRI.

Reference

[1] A.S. Martin, J.R. Sambles, G.J. Ashwell, Phys. Rev.Lett. 70, 218 (1993).

[2] R.M. Metzger, B. Chen, U. Hopfner, M.V. Lakshmikantham, D. Vuillaume, T. Kawai, X. Wu, H. Tachibana, T.V. Hughes, H. Sakurai, J.W. Baldwin, C. Hosch, M.P. Cava, L. Brehmer, G.J. Ashwell, J.Am.Chem.Soc.119, 10455 (1997).

[3] C. Zhou, M.R. Deshpande, M.A. Reed, L. JonesII, J. M. Tour, Appl.Phys.Lett. 71, 611 (1997).

[4] P.E. Kornilovitch, A.M. Bratkovsky, R.S. Williams, Phys. Rev. B. 66, 165436 (2002).

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Last update: August 24, 2005